Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2008-03-25
2008-03-25
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S014000, C438S015000, C438S026000, C438S051000, C257SE21499, C257SE23001, C257SE23003
Reexamination Certificate
active
07348210
ABSTRACT:
A structure and a method for forming the same. The method includes (a) providing a structure which includes (i) a dielectric layer, (ii) an electrically conducting bond pad on and in direct physical contact with the dielectric layer top surface, (iii) a first passivation layer on the dielectric layer top surface and on the electrically conducting bond pad, wherein the first passivation layer comprises a first hole directly above the electrically conducting bond pad, and (iv) an electrically conducting solder bump filling the first hole and electrically coupled to the electrically conducting bond pad; and (b) forming a second passivation layer on the first passivation layer, wherein second passivation layer is in direct physical contact with the electrically conducting solder bump, and wherein the electrically conducting solder bump is exposed to a surrounding ambient immediately after said forming the second passivation layer is performed.
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Definition of “Alpha particle” by www.answers.com; search word: alpha particle.
Daubenspeck Timothy H.
Gambino Jeffrey Peter
Muzzy Christopher David
Sauter Wolfgang
Sprogis Edmund Juris
International Business Machines - Corporation
Kim Su C.
Sabo William D.
Schmeiser Olsen & Watts
Smith Matthew
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