Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-01-15
2008-01-15
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S189090, C327S536000
Reexamination Certificate
active
07319626
ABSTRACT:
A first pump circuit is coupled to a first pump signal line and is configured to generate a first voltage greater than a power supply voltage at an output thereof responsive to transition of the first pump signal line from a ground voltage to the power supply voltage. A second pump circuit includes a first switching circuit configured to couple a first capacitor between the output of the first pump circuit and a ground voltage node responsive to the transition of a first pump signal line from the ground voltage to the power supply voltage to charge the first capacitor to the first voltage, and to couple a second capacitor between the first capacitor and a second pump signal line responsive to a transition of the second pump signal line from the ground voltage to the power supply voltage to generate a second voltage greater than the first voltage.
REFERENCES:
patent: 6255900 (2001-07-01), Chang et al.
patent: 6356501 (2002-03-01), Park et al.
patent: 6584031 (2003-06-01), Fujisawa et al.
patent: 6700436 (2004-03-01), Shim
patent: 2006/0120179 (2006-06-01), Hwang et al.
patent: 2006/0220729 (2006-10-01), Kim
patent: 102 49 604 (2003-06-01), None
patent: 2000-232773 (2000-08-01), None
patent: 1020030082239 (2003-10-01), None
Myers Bigel & Sibley Sajovec, PA
Nguyen Hien N
Phung Anh
Samsung Electronics Co,. Ltd.
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