Method and system for optimizing intra-field critical...

Details Method and system for optimizing intra-field critical... Method and system for optimizing intra-field critical...

2011-03-01

2011-03-01

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000, C430S311000

Reexamination Certificate

active

07897297

ABSTRACT:
Disclosed is a method and a system for optimizing intra-field critical dimension of an integrated circuit. A first mask for an integrated circuit is provided comprising at least one device region. A second mask is provided by copying the first mask and a lithography operation is provided to the integrated circuit using the first and second masks, wherein the critical dimension of the integrated circuit is optimized using the second mask. The second mask comprises a plurality of sacrificial patterns, which may be a plurality of flat patterns or a plurality of grating patterns.

REFERENCES:
patent: 6835507 (2004-12-01), Ki et al.
patent: 7234128 (2007-06-01), Gau et al.
patent: 7566181 (2009-07-01), Yang et al.
patent: 2003/0104319 (2003-06-01), Lin et al.
patent: 2003/0180632 (2003-09-01), Eurlings et al.
patent: 2004/0063038 (2004-04-01), Shin et al.
patent: 2005/0136341 (2005-06-01), Park et al.
patent: 2005/0196684 (2005-09-01), Nakamura et al.
patent: 2006/0134532 (2006-06-01), Ogawa et al.
patent: 2006/0196960 (2006-09-01), Yu et al.
patent: 2006/0222975 (2006-10-01), Ke et al.
patent: 2007/0292771 (2007-12-01), Ke et al.
patent: 2006-154404 (2006-06-01), None
patent: 2006154404 (2006-06-01), None
patent: I251865 (2003-10-01), None
patent: 200618046 (2004-09-01), None
Ke, Chih-Ming, et al., “Evaluation of Line and Hole Measurement by High-Resolution/Low-Magnification CD SEM”, Proceedings of SPIE, vol. 5752, May 2005, pp. 1292-1299.
Ke, Chih-Ming, et al., “90nm Lithography Process Characterization Using ODP Scatterometry Technology”, Proceedings of SPIE, vol. 5375, May 2004, pp. 597-604.
Taiwanese Patent Office, Office Action dated Dec. 11, 2009, Application No. 09820799760, 5 pages.
Chinese Patent Office, Chinese Office Action mailed Jul. 7, 2010, Application No. 200710111439.1; 4 pages.

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