Semiconductor device and method of forming IPD structure...

Details Semiconductor device and method of forming IPD structure... Semiconductor device and method of forming IPD structure...

2011-05-31

2011-05-31

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S210000, C438S329000, C257S516000, C257S532000

Reexamination Certificate

active

07951663

ABSTRACT:
A semiconductor device is made by forming a smooth conductive layer over a substrate. A first insulating layer is formed over a first surface of the smooth conductive layer. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. The substrate is removed. A second conductive layer is formed over a second surface of the smooth conductive layer opposite the first surface of the smooth conductive layer. A third insulating layer is formed over the second conductive layer. The second conductive layer, smooth conductive layer, first insulating layer, and first conductive layer constitute a MIM capacitor. A portion of the second conductive layer includes an inductor. The smooth conductive layer has a smooth surface to reduce particles and hill-locks which decreases ESR, increases Q factor, and increases ESD of the MIM capacitor.

REFERENCES:
patent: 5250843 (1993-10-01), Eichelberger
patent: 5353498 (1994-10-01), Fillion et al.
patent: 5689138 (1997-11-01), Dekker et al.
patent: 5841193 (1998-11-01), Eichelberger
patent: 6825092 (2004-11-01), Zurcher et al.
patent: 7619901 (2009-11-01), Eichelberger et al.
patent: 2008/0153245 (2008-06-01), Lin et al.
patent: 2009/0001509 (2009-01-01), Lin
patent: 2009/0309212 (2009-12-01), Shim et al.

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