Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21179
Reexamination Certificate
active
07915124
ABSTRACT:
A method of fabricating a memory system is disclosed that includes a set of non-volatile storage elements. The method includes forming a floating gate having a top and at least two sides. A dielectric cap is formed at the top of the floating gate. An inter-gate dielectric layer is formed around the at least two sides of the floating gate and over the top of the dielectric cap. A control gate is formed over the top of the floating gate, the inter-gate dielectric layer separates the control gate from the floating gate. In one aspect, forming the dielectric cap includes implanting oxygen in the top of the floating gate and heating the floating gate to form the dielectric cap from the implanted oxygen and silicon from which the floating gate was formed.
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Chin Henry
Kai James K.
Lee Dana
Matamis George
Orimoto Takashi Whitney
Booth Richard A.
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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