Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-18
2011-01-18
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S127000, C257SE23173
Reexamination Certificate
active
07871920
ABSTRACT:
Structures and methods for forming the same. A semiconductor chip includes a semiconductor substrate and a transistor on the semiconductor substrate. The chip further includes N interconnect layers on top of the semiconductor substrate and being electrically coupled to the transistor, N being a positive integer. The chip further includes a first dielectric layer on top of the N interconnect layers, and a second dielectric layer on top of the first dielectric layer. The second dielectric layer is in direct physical contact with each interconnect layer of the N interconnect layers. The chip further includes an underfill layer on top of the second dielectric layer. The second dielectric layer is sandwiched between the first dielectric layer and the underfill layer. The chip further includes a laminate substrate on top of the underfill layer. The underfill layer is sandwiched between the second dielectric layer and the laminate substrate.
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Daubenspeck Timothy Harrison
Gambino Jeffrey Peter
Muzzy Christopher David
Sauter Wolfgang
International Business Machines - Corporation
Kotulak Richard M.
Schmeiser Olsen & Watts
Wagner Jenny L
Zarneke David A
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