Method for removing anti-reflective coating layer using plasma e

Details Method for removing anti-reflective coating layer using plasma e Method for removing anti-reflective coating layer using plasma e

1999-10-12

2000-10-24

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438629, 438631, 438636, 438724, H01L 21336

Patent

active

061366498

ABSTRACT:
The present invention provides a method for selectively removing anti-reflective coating (ARC) from the surface of a dielectric layer over the surface of a substrate without scratching the dielectric layer and/or tungsten contacts formed therein. In one embodiment, a fluoromethane (CH.sub.3 F)/oxygen (O.sub.2) etch chemistry is used to selectively remove the ARC layer. The CH.sub.3 F/O.sub.2 etch chemistry etches the ARC layer at a rate which is significantly faster than the etch rates of the dielectric layer or the tungsten contacts.

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patent: 6013582 (2000-01-01), Ionov et al.

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