Method of making buried contact structure for a MOSFET device in

Details Method of making buried contact structure for a MOSFET device in Method of making buried contact structure for a MOSFET device in

1997-01-15

1998-07-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438586, 438649, H01L 218244

Patent

active

057803315

ABSTRACT:
A process for creating a buried contact structure, for a MOSFET device, to be used in an SRAM cell, has been developed. The process features using a thick tungsten silicide layer, on the sides of a split polysilicon shape, followed by a series of selective, anisotropic RIE procedures, used to create a buried contact structure without crevicing or trenching of the semiconductor substrate, in an region adjacent to the buried contact structure.

REFERENCES:
patent: 4950620 (1990-08-01), Harrington, III
patent: 5168076 (1992-12-01), Godinho et al.
patent: 5298782 (1994-03-01), Sundaresan
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5605853 (1997-02-01), Yoo et al.

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