Method and structure for controlling plasma uniformity

Details Method and structure for controlling plasma uniformity Method and structure for controlling plasma uniformity

1997-08-26

2000-08-29

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

427571, 438732, 156345, 118723E, 20429837, H05H 100

Patent

active

061103950

ABSTRACT:
The present invention relates to a method and structure for controlling plasma uniformity in plasma processing applications. Electron thermal conductivity parallel and perpendicular to magnetic field lines differs by orders of magnitude for low magnetic fields (on the order of 10 gauss). This property allows the directing of heat flux by controlling the magnetic field configuration independent of ions since the effect of modest magnetic fields upon the transport of ions themselves is minimal. Heat is preferentially conducted along magnetic field lines with electron temperatures on the order of 0.1 to 1 eV/cm being sufficient to drive kilowatt-level heat fluxes across areas typical of plasma processing source dimensions.

REFERENCES:
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4886565 (1989-12-01), Koshiba et al.
patent: 4963242 (1990-10-01), Sato et al.
patent: 5215619 (1993-06-01), Cheng et al.

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