Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-02-12
1999-01-19
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438635, H01L 2100
Patent
active
058613269
ABSTRACT:
In a semiconductor integrated circuit for forming an offset gate structure by utilizing an anodic oxidation film fabricated around a gate electrode, even when a length of a gate line becomes long, the anodic oxidation film can be made uniform, and also electric characteristics of thin-film transistors can be matched with each other. In a semiconductor integrated circuit manufacturing method, a large number of insulated gate type field-effect transistors are connected with respect to a single gate line. This manufacturing method is comprised by steps of: forming a film made of a material capable of performing an anodic oxidation for constructing the single gate line; forming a plurality of gate lines, a large number of gate electrodes extended from the plural gate lines, and a power supply line connected to the large number of gate electrodes by patterning the film; and forming an anodic oxide layer on at least an exposed surface of the gate electrode by supplying a current to the power supply line in an electrolytic solution.
REFERENCES:
patent: 5359206 (1994-10-01), Yamamoto et al.
patent: 5422293 (1995-06-01), Konya
patent: 5576225 (1996-11-01), Zhang et al.
Teramoto Satoshi
Yamazaki Shunpei
Bowers Charles
Ferguson Jr. Gerald J.
Hawranek Scott J.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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