4. Geometrical instruments
  5. Indicator of direction of force traversing natural media
  6. Level or plumb, terrestrial gravitation responsive

Wen Chin Lin

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Memory cell structure

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate

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MRAM cell with reduced write current

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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Multi-sensing level MRAM structures

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Multiple width and/or thickness write line in MRAM

Static information storage and retrieval – Interconnection arrangements – Magnetic
Reexamination Certificate

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Non-orthogonal write line structure in MRAM

Static information storage and retrieval – Interconnection arrangements – Magnetic
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Profile ID: LFUS-PAI-P-2078352

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