MRAM cell with reduced write current

Details MRAM cell with reduced write current MRAM cell with reduced write current

2007-01-30

2007-01-30

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11030453

ABSTRACT:
A magnetic random access memory (MRAM) cell that includes an MRAM stack and a conductive line for carrying write current associated with the MRAM cell. The conductive line is oriented in a direction that is angularly offset from an easy axis of the MRAM stack by an acute angle, such as about 45 degrees.

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