Multi-sensing level MRAM structures

Details Multi-sensing level MRAM structures Multi-sensing level MRAM structures

2007-01-23

2007-01-23

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257SE21665, C257SE29042, C257SE29179, C438S003000, C438S240000

Reexamination Certificate

active

10685824

ABSTRACT:
The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially connecting the parallel configuration to an electrode of the switching element. The resistance of the first MTJ device is different from the resistance of the second.

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