4. Electricity: measuring and testing
  5. Fault detecting in electric circuits and of electric components
  6. Of individual circuit component or element

Wei Long

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C-V method to extract lateral channel doping profiles of MOSFETs

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent

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Determination of parasitic capacitance between the gate and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Utility Patent

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Determination of thermal resistance for field effect...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Determination of thermal resistance for field effect...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate

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Dual silicide process to reduce gate resistance

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-1161972

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