C-V method to extract lateral channel doping profiles of MOSFETs

Details C-V method to extract lateral channel doping profiles of MOSFETs C-V method to extract lateral channel doping profiles of MOSFETs

1999-01-26

2000-05-30

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

H01L 2978

Patent

active

060694858

ABSTRACT:
A method and apparatus that uses gate-to-substrate capacitance with varying amounts of source/drain junction bias to measure channel lateral doping profile by applying a series of different voltages between the source/drain and the substrate. The gate capacitance is measured for the different voltages. The capacitance is used to calculate the depletion width. From the depletion width, channel doping is calculated. Using this method direct evidence of a localized Boron pile up at source/drain edge is shown.

REFERENCES:
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