Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1999-01-26
2000-05-30
Nguyen, Vinh P.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
H01L 2978
Patent
active
060694858
ABSTRACT:
A method and apparatus that uses gate-to-substrate capacitance with varying amounts of source/drain junction bias to measure channel lateral doping profile by applying a series of different voltages between the source/drain and the substrate. The gate capacitance is measured for the different voltages. The capacitance is used to calculate the depletion width. From the depletion width, channel doping is calculated. Using this method direct evidence of a localized Boron pile up at source/drain edge is shown.
REFERENCES:
patent: 5194923 (1993-03-01), Vinal
On the Accuracy of Channel Length Characterization of LDD MOSFET's, Jack Y. -C. Sun, Matthew R. Wordeman, Stephen E. Laux, 1986, 7 pages (month unavailable).
An Accurate Gate Length Extraction Method for Sub-Quarter Micron MOSFET's, Cheng-Liang Huang, John V. Faricelli, Dimitri A. Antoniadis, Nadim A. Khalil, Rafael A. Rios, 1996, 6 pages (unavailable month).
A Problem-Specific Inverse Method for Two-Dimensional Doping Profile Determination from Capacitance-Voltage Measurements, G. J. L. Ouwerling, 1991, 18 pages (month unavailable).
The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling, Nadim Khalil, John Faricelli, David Bell, Siegfried Selberherr, 1995, 3 pages (month unavailable).
A New "Shift and Ratio" Method for MOSFET Channel-Length Extraction, Yuan Taur, D.S. Zicherman, D.R. Lombardi, Phillip J. Restle, C.H. Hsu, Hussein I. Hanafi, Matthew R. Wordeman,Bijan Davari, Ghavam G. Shahidi, 1992, 3 pages (month unavailable).
CMOS Circuit Design, Layout, and Simulation, R. Jacob Baker, Harry W. Li, David E. Boyce, 1997, 5 pages (month unavailable).
A New Capacitance Measurement Method for Lateral Diffusion Profiles in Mosfet's with Extremely Short Overlap Regions, H. Uchida, Y. Kajita, K. Fukuda, J. Ida, N. Hirashita, K. Nishi, publication date unknown, 2 pages (month unavailable).
Jiang Chun
Liu Yowjuang W.
Long Wei
Advanced Micro Devices , Inc.
Nguyen Vinh P.
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