4. Chemistry of inorganic compounds
  5. Silicon or compound thereof
  6. Oxygen containing

Wataru Sugimura

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Apparatus for manufacturing semiconductor single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate

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Apparatus for manufacturing semiconductor single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate

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Manufacturing method of hydrogen-doped silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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Method for growing silicon single crystal and silicon wafer

Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Reexamination Certificate

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Method for growing silicon single crystal and silicon wafer

Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2391865

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