Apparatus for manufacturing semiconductor single crystal

Details Apparatus for manufacturing semiconductor single crystal Apparatus for manufacturing semiconductor single crystal

2007-12-11

2007-12-11

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S217000, C117S218000, C117S222000

Reexamination Certificate

active

11328099

ABSTRACT:
This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a buffer tank for mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas and for holding the hydrogen mixed gas.

REFERENCES:
patent: 61-178495 (1986-08-01), None
patent: 11-189495 (1999-07-01), None
patent: 2000-281491 (2000-10-01), None
patent: 2001-335396 (2001-12-01), None
patent: 2004-182525 (2004-07-01), None
patent: 2004-217460 (2004-08-01), None

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