Apparatus for manufacturing semiconductor single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S217000, C117S218000, C117S222000

Reexamination Certificate

active

11328099

ABSTRACT:
This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a buffer tank for mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas and for holding the hydrogen mixed gas.

REFERENCES:
patent: 61-178495 (1986-08-01), None
patent: 11-189495 (1999-07-01), None
patent: 2000-281491 (2000-10-01), None
patent: 2001-335396 (2001-12-01), None
patent: 2004-182525 (2004-07-01), None
patent: 2004-217460 (2004-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for manufacturing semiconductor single crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for manufacturing semiconductor single crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for manufacturing semiconductor single crystal will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3848083

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.