Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2008-06-10
2008-06-10
Kunemund, Robert (Department: 1791)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S217000, C117S218000
Reexamination Certificate
active
07384480
ABSTRACT:
This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a gas mixing unit for uniformly mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas.
REFERENCES:
patent: 4400232 (1983-08-01), Ownby et al.
patent: 5882402 (1999-03-01), Fuerhoff
patent: 2005/0241569 (2005-11-01), Oyama et al.
patent: 2006/0156969 (2006-07-01), Hourai et al.
patent: 61-178495 (1986-08-01), None
patent: 11-189495 (1999-07-01), None
patent: 2000-281491 (2000-10-01), None
patent: 2000-335995 (2000-12-01), None
patent: 2001-335396 (2001-12-01), None
patent: 2002-029884 (2002-01-01), None
patent: 2003-321294 (2003-11-01), None
patent: 2004-182525 (2004-07-01), None
patent: 2004-217460 (2004-08-01), None
patent: WO 01/63027 (2001-08-01), None
International Search Report (w/ no English Translation), Dec. 22, 2005.
Hourai Masataka
Ono Toshiaki
Sugimura Wataru
Chaet Marissa W.
Kunemund Robert
Pillsbury Winthrop Shaw & Pittman LLP
Sumco Corporation
LandOfFree
Apparatus for manufacturing semiconductor single crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for manufacturing semiconductor single crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for manufacturing semiconductor single crystal will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2798911