Apparatus for manufacturing semiconductor single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Reexamination Certificate

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C117S217000, C117S218000

Reexamination Certificate

active

07384480

ABSTRACT:
This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a gas mixing unit for uniformly mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas.

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patent: 2005/0241569 (2005-11-01), Oyama et al.
patent: 2006/0156969 (2006-07-01), Hourai et al.
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International Search Report (w/ no English Translation), Dec. 22, 2005.

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