Manufacturing method of hydrogen-doped silicon single crystal

Details Manufacturing method of hydrogen-doped silicon single crystal Manufacturing method of hydrogen-doped silicon single crystal

2007-11-27

2007-11-27

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S020000

Reexamination Certificate

active

11194470

ABSTRACT:
A manufacturing method of a hydrogen-doped silicon single crystal. A silicon single crystal is grown under an inert atmosphere containing hydrogen in a CZ pulling furnace comprising a pull chamber connected to a main chamber. At least one portion of a mixed gas composed of a hydrogen gas and an inert gas to be introduced into the CZ pulling furnace is supplied directly to a surface of a silicon melt in the main chamber, preferably to adjacent parts to a solid-liquid interface of the surface thereof, or in the silicon melt.

REFERENCES:
patent: 61-178495 (1986-08-01), None
patent: 11-189495 (1999-07-01), None
patent: 2000-281491 (2000-10-01), None
patent: 2001-335396 (2001-12-01), None

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