4. Active solid-state devices (e.g., transistors, solid-state diode
  5. With means to increase breakdown voltage threshold

Ulf Gustafsson

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Bipolar semiconductor device having semiconductor layers of SiC

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent

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Bipolar transistor having a low doped drift layer of...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate

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Depletion region stopper for PN junction in silicon carbide

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold
Patent

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Fabrication of a SiC semiconductor device comprising a pn juncti

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent

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Field controlled semiconductor device of SiC and a method for pr

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent

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Profile ID: LFUS-PAI-P-474125

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