Bipolar semiconductor device having semiconductor layers of SiC

Details Bipolar semiconductor device having semiconductor layers of SiC Bipolar semiconductor device having semiconductor layers of SiC

1996-09-04

1998-11-03

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 76, H01L 310312

Patent

active

058312870

ABSTRACT:
A bipolar semiconductor comprising layers of SiC semiconductor material. At least one pn-junction is formed between two of the layers having charged carrier transport across the junction when the device is in a conductive state. A resistive element in series with the pn-junction lowers the current through the pn-junction as the voltage drop across the device increases with an increase in temperature. The temperature coefficient for the device switches from a negative to a positive at a lower current through the device.

REFERENCES:
patent: 3972749 (1976-08-01), Pavlichenko
patent: 4497773 (1985-02-01), Kisinko et al.
patent: 5043773 (1991-08-01), Precht et al.
patent: 5243204 (1993-09-01), Suzuki et al.
patent: 5338945 (1994-08-01), Baliga et al.
patent: 5385855 (1995-01-01), Brown et al.
patent: 5396085 (1995-03-01), Baliga

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