Fabrication of a SiC semiconductor device comprising a pn juncti

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region

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438518, 438931, H01L 2126

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active

060402377

ABSTRACT:
A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers and where the edge of the higher doped conducting layer of the pn junction exhibits a charge profile with a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the main pn junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.

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Neudeck et al., 2000 V 6H-SiC P-N Junction Diodes Grown by Chemical Vapor Deposition, Appl. Phys. Lett. 64 (11), Mar. 14, 1994, pp. 1386-1388.
Bhatnagar et al., Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices, IEEE Transactions on Electron Devices, vol. 40, No. 3, Mar. 1993, pp. 645-655.
R. Stengl et al., Variation of Lateral Doping--A New Concept to Avoid High Voltage Breakdown of Planar Junctions, IEDM, Dec. 1985, pp. 154-157.

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