Field controlled semiconductor device of SiC and a method for pr

Details Field controlled semiconductor device of SiC and a method for pr Field controlled semiconductor device of SiC and a method for pr

1997-10-17

1999-07-13

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257133, 257329, 257345, 257403, H01L 310312, H01L 2974, H01L 31111

Patent

active

059230517

ABSTRACT:
A field controlled semiconductor device of SiC comprises superimposed in the order mentioned at least a drain (12), a highly doped substrate layer (1) and a low doped n-type drift layer (2). It has also a highly doped n-type source region layer (6) and a source (11) connected thereto. A doped channel region layer (4) connects the source region layer to the drift layer, and a current is intended to flow therethrough when the device is in an on-state. The device has also a gate electrode (9). The channel region layer has a substantially lateral extension and is formed by a low doped n-type layer (4). The gate electrode (9) is arranged to influence the channel region layer from above for giving a conducting channel (17) created therein from the source region layer to the drift layer a substantially lateral extension.

REFERENCES:
patent: 5357125 (1994-10-01), Kumagi
patent: 5396087 (1995-03-01), Baligh
Sze, Semiconductor devices, Physics and Technology, Copyright 1988, pp. 74 and 75.
Constapel et al., Trench-IGBTs with Integrated Diverter Structures, Proceedings of 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp. 201-206.

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