CMOS image sensor devices

Details CMOS image sensor devices CMOS image sensor devices

2006-09-27

2008-09-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S059000, C257S072000, C257SE27131, C257SE27132

Reexamination Certificate

active

07423306

ABSTRACT:
A pixel comprises a substrate comprising a first well region formed in a top portion of the substrate, having a first conductivity type. A plurality of shallow trench isolation (STI) structures is formed in the first well region of the substrate, defining a pixel region over the substrate. A second well region is formed in a potion of the first well region of the pixel region, having a second conductivity type opposite to the first conductivity type. A top surface region is formed in a top portion of the second well region, having the first conductivity type. A MOS transistor formed on portions the pixel region, having a pair of source/drain regions formed in the first well region, wherein the source/drain regions are formed of the second conductivity type and one thereof electrically connects the first and well doping regions and the first well region is formed with a depth greater than that of the adjacent STI structure.

REFERENCES:
patent: 6995411 (2006-02-01), Yaung et al.
patent: 7005312 (2006-02-01), Lee et al.
patent: 2004/0217394 (2004-11-01), Lee
patent: 2006/0231898 (2006-10-01), Jeong et al.
patent: 2007/0131988 (2007-06-01), Lin

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