Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2005-08-30
2005-08-30
Tran, M. (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185200
Reexamination Certificate
active
06937511
ABSTRACT:
A circuit and method for self-converging programming of a charge storage memory cell, such as NROM or floating gate flash, having a source and a drain in a substrate, a charge storage element and a control gate. The method includes applying source voltage, inducing a body effect that increases the effective threshold, and increasing the source voltage along with the drain voltage to moderate hot electron injection efficiency during the program operation, at least during a portion of the program operation in which convergence on a target threshold occurs. A selected gate voltage is applied during the operation to establish the target threshold voltage. In multiple bit cells, the gate voltage is set according to the data values to be stored, enabling self-convergence at more than one target threshold.
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Hsu Tzu-Hsuan
Wu Chao-I
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Tran M.
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