Tso-Ping Ma

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Ferroelectric dynamic random access memory

Static information storage and retrieval – Systems using particular element – Ferroelectric
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Isotopically enriched semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device
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Isotopically enriched semiconductor devices

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Process for eliminating undesirable charge centers in MIS device

Metal treatment – Compositions – Heat treating
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Profile ID: LFUS-PAI-P-981628

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