Ferroelectric dynamic random access memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365149, 365222, G11C 1122

Patent

active

060672447

ABSTRACT:
A memory including an array of memory cells, each of which includes a ferroelectric field effect transistor (FET) as its memory element; and sense and refresh circuitry connected to the array of memory cells to read stored data within each cell by sensing source-to-drain conductivity of the ferroelectric transistor and to refresh the stored data.

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