Process for eliminating undesirable charge centers in MIS device

Details Process for eliminating undesirable charge centers in MIS device Process for eliminating undesirable charge centers in MIS device

1976-04-29

1977-03-22

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148186, 29584, H01L 21263

Patent

active

040134857

ABSTRACT:
The electrical properties of MIS semiconductor devices, which have been damaged by radiation, are restored by treating the devices in a properly oriented RF field at low pressure.

REFERENCES:
patent: 3533857 (1970-10-01), Mayer et al.

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