Isotopically enriched semiconductor devices

Details Isotopically enriched semiconductor devices Isotopically enriched semiconductor devices

1994-07-05

1995-08-15

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

257289, H01L 2724

Patent

active

054421918

ABSTRACT:
A semiconductor structure including a single-crystal region composed of an isotopically enriched material, wherein the isotopically enriched material is selected from a subset consisting of all semiconductor materials except elemental silicon; and a semiconductor device formed by using said isotopically enriched semiconductor region.

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patent: 5146314 (1992-09-01), Pankove
T. H. Geballe et al., "Isotopic and Other Types of Thermal Resistance in Germanium", Physical Review, vol. 110, 1958, pp. 773-775.
G. A. Slack, "Effect of Isotopes on Low-Temperature Thermal Conductivity", Physical Review, vol. 105, No. 3, 1957, pp. 829-831.
M. W. Browne, "G.E. Sees Breakthroughs From New Diamond", The New York Times, Jul. 11, 1990, p. D6.
T. R. Anthony et al., "Thermal Diffusivity of Isotopically Enriched .sup.12 C Diamond", Physical Review B, vol. 42, No. 2, Jul. 1990, pp. 1104-1111.

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