Isotopically enriched semiconductor devices

Details Isotopically enriched semiconductor devices Isotopically enriched semiconductor devices

1990-11-16

1992-09-01

Carroll, J.

357 16, 357 30, 357 40, 357 43, 357 85, H01L 29161, H01L 2714, H01L 2702

Patent

active

051444097

ABSTRACT:
A semiconductor structure including a single-crystal region composed of an isotopically enriched semiconductor material, and a semiconductor device formed in the isotopically enriched semiconductor region.

REFERENCES:
patent: 4628341 (1986-12-01), Thomas
patent: 4721684 (1988-06-01), Musumeci
T. H. Geballe et al., "Isotopic and Other Types of Thermal Resistance in Germanium", Physical Review, vol. 110, 1958, pp. 773-775.
G. A. Slack, "Effect of Isotopes on Low-Temperature Thermal Conductivity", Physical Review, vol. 105, No. 3, 1957, pp. 829-831.
M. W. Browne, "G. E. Sees Breakthroughs From New Diamond", The New York Times, Jul. 11, 1990, p. D6.
T. R. Anthony et al., "Thermal Diffusivity of Isotopically Enriched .sup.12 C Diamond", Physical Review B, vol. 42, No. 2, Jul., 1990, pp. 1104-1110.

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