4. Supports: racks
  5. Special article
  6. Platelike

Tomofumi Nakamura

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Method for forming SOI structure

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent

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Method for forming SOI structure

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Method for producing SOI substrate

Fishing – trapping – and vermin destroying
Patent

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Semiconductor chip or device having a connecting member...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate

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Semiconductor device having chip-on-chip structure, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate

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Profile ID: LFUS-PAI-P-1189389

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