Method for producing SOI substrate

Details Method for producing SOI substrate Method for producing SOI substrate

1992-06-19

1993-05-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 89, 437 83, 437 84, 437 62, H01L 21265, H01L 2120

Patent

active

052081672

ABSTRACT:
A method for producing a SOI substrate comprising: a step of forming a first opening to an insulating film on a semiconductor substrate and then forming semiconductor crystal layer by epitaxial growth over the first opening and the insulating film; a step of forming a second opening by partially removing the semiconductor crystal layer; a step of forming an integrated insulating film, and a step of forming an integrated semiconductor crystal layer. With the present invention, a semiconductor crystal layer can be formed on an insulating film on a substrate with large area, wherein the crystal layer and the substrate is completely insulated from each other. Further even from such materials as hard to form monocrystal substrate, a substrate can be easily obtained.

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