4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With housing or contact structure

Takahiro Kozawa

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Electrodes for p-type group III nitride compound semiconductors

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Gallium nitride-based compound semiconductor light-emitting devi

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent

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Group III nitride compound semiconductor light-emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate

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Group III nitride compound semiconductor light-emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate

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III group nitride system compound semiconductor light...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Profile ID: LFUS-PAI-P-168290

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