Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1992-10-30
1994-11-29
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257 94, 257103, 257749, 257766, H01L 29205, H01L 3300
Patent
active
053692896
ABSTRACT:
A light-emitting device comprises an n-type layer made of an n-type gallium nitride-based compound of the formula Al.sub.x Ga.sub.1-x N, wherein 0.ltoreq.X<1, and an i-type layer formed on the n-type layer and made of a semi-insulating i-type gallium nitride-based compound semiconductor and doped with a p-type impurity for junction with the n-type layer. A first electrode is formed on the surface of the i-type layer and made of a transparent conductive film and a second electrode is formed to connect to the n-type layer through the i-type layer. The device is so arranged that light is emitted from the side of the i-type layer to the outside. When an electric current is supplied to the first electrode from a wire contacted thereto, the first electrode is held entirely at a uniform potential. Light is emitted from the entire interface beneath the first electrode and can thus be picked up from the first electrode which is optically transparent.
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Kozawa Takahiro
Tamaki Makoto
Jackson Jerome
Kabushiki Kaisha Toyota Chuo Kenkyusho
Toyoda Gosei Co,., Ltd.
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