Electrodes for p-type group III nitride compound semiconductors

Details Electrodes for p-type group III nitride compound semiconductors Electrodes for p-type group III nitride compound semiconductors

1996-06-14

1999-12-28

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 81, H01L 2348

Patent

active

060085398

ABSTRACT:
An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.

REFERENCES:
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5563422 (1996-10-01), Nakamura et al.
Foresi et al., "Metal contacts of gallium nitride", Applied Physics Letters 52(22), May 31, 1993, pp. 2859-2861.

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