Satoshi Hiyamizu

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HEMT with epitaxial narrow bandgap source/drain contacts isolate

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High electron mobility device with intrinsic AlAs/GaAs superlatt

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High electron mobility single heterojunction semiconductor devic

Optics: eye examining – vision testing and correcting – Spectacles and eyeglasses – Ophthalmic lenses or blanks
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Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs h

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
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Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs h

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Profile ID: LFUS-PAI-P-1021847

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