High electron mobility device with intrinsic AlAs/GaAs superlatt

Details High electron mobility device with intrinsic AlAs/GaAs superlatt High electron mobility device with intrinsic AlAs/GaAs superlatt

1987-12-07

1989-05-23

Clawson, Jr., Joseph E.

357 22, 357 58, 357 16, 357 91, H01L 2712

Patent

active

048335088

ABSTRACT:
A field effect semiconductor device which utilizes a 2DEG and is composed of a semi-insulating GaAs substrate; an i-type GaAs active layer; a superlattice structure layer which comprises a first i-type AlAs thin layer, a GaAs thin layer doped with an Si atomic plane, and a second i-type AlAs thin layer, these thin layers forming a GaAs quantum well; and n-type AlGaAs layer; and electrodes for source, drain, and gate.

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