Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs h

Details Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs h Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs h

1996-02-13

1999-09-14

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117902, C30B 2502

Patent

active

059517565

ABSTRACT:
A method of forming GaAs/AlGaAs hetero-structure. The method includes the steps of preparing a GaAs substrate having a (411)A-oriented surface and setting the GaAs substrate inside a growth container with the (411)A surface being disposed as a surface to be deposited. The pressure inside the growth chamber is reduced and the GaAs substrate is heated up to a predetermined temperature to cause epitaxial growth of Ga, Al, As on the (411)A substrate and forming a GaAs/AlGaAs hetero-structure on the (411)A-oriented GaAs substrate.

REFERENCES:
patent: 5081511 (1992-01-01), Tehrani et al.
patent: 5153890 (1992-10-01), Bona et al.
patent: 5298441 (1994-03-01), Goronkin et al.
patent: 5679179 (1997-10-01), Hiyamizu et al.
"Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of A1GaAs/GaAs Heterojunction Bipolar Transistors," Mochizuki et al; Japanese Journal of Applied Physics, vol. 31 (1992) pp. 3495-3499, Part 1, No. 11 Nov. 1992.

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