High electron mobility single heterojunction semiconductor devic

Details High electron mobility single heterojunction semiconductor devic High electron mobility single heterojunction semiconductor devic

1981-07-27

1989-01-17

Edlow, Martin H.

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351 22, 351 58, 351 15, 351 88, H01G 29161

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047990880

ABSTRACT:
A high electron mobility single heterojunction semiconductor devices having a layer configuration comprising a N-type AlGaAs layer grown on an undoped GaAs layer grown on an undoped AlGaAs layer grown on a semiconductor substrate containing an impurity producing a deep level. The undoped AlGaAs layer has at least three functions including (a) a getter for the deep level impurity which may be diffused from the substrate during an annealing process, (b) a buffer improving the crystal condition of the undoped GaAs layer, and (c) a test layer grown for the purpose of predetermining the intensity of molecular or ion beams for each of Al, Ga, As and dopants e.g. Si. This allows annealing processes and ion implantation processes to be introduced to the method for production of this type of semiconductor devices without reducing the electron mobility thereof.

REFERENCES:
patent: 4155784 (1979-05-01), Mills et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4346394 (1982-08-01), Figueroa
Delagebeaudent et al., "Two-Dimensional Electron Gas MESFET Structure" Electronic Lett., vol. 16, No. 17, pp. 667-668, Aug. 1980.
Dingle et al., "Electron Mobilities in Modulation-doped semiconductor Hetrojunction Superlettres", Appl. Phys. Lett., vol. 33, No. 7, pp. 665-667, Oct. 1978.
Mimura et al., "A New Field-Effect Transistor with Selectively Doped GaAsln-AlGaAs Heterojunctions " Jap. Jour. Appl. Phys., vol. 19 No. 5 pp. 225-227, May 1980.
Hiyamizu et al., "High Mobility of Two-Dimensional Electrons at the GaAs/AlGAs Hetrojunction Interlace, " Appl. Phys. Lett. vol. 37, No. 9 pp. 805-807, Nov. 1980.

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