Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs h

Details Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs h Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs h

1995-09-05

1997-10-21

Kunemund, Robert

Metal treatment

Barrier layer stock material, p-n type

With contiguous layers of different semiconductive material

117101, 117902, H01L 2904

Patent

active

056791798

ABSTRACT:
A method of forming GaAs/AlGaAs hetero-structure. The method includes the steps of preparing a GaAs substrate having a (411)A-oriented surface and setting the GaAs substrate inside a growth container with the (411)A surface being disposed as a surface to be deposited. The pressure inside the growth chamber is reduced and the GaAs substrate is heated up to a predetermined temperature to cause epitaxial growth of Ga, Al, As on the (411)A substrate and forming a GaAs/AlGaAs hetero-structure on the (411)A-oriented GaAs substrate.

REFERENCES:
patent: 5081511 (1992-01-01), Tehrani et al.
patent: 5153890 (1992-10-01), Bona et al.
patent: 5298441 (1994-03-01), Goronkin et al.

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