4. Static information storage and retrieval
  5. Systems using particular element
  6. Flip-flop

Ming-Chih Chung

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Method of making stepped edge structure of an EEPROM tunneling w

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Stepped edge structure of an EEPROM tunneling window

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Trench free SRAM cell structure

Static information storage and retrieval – Systems using particular element – Flip-flop
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Tungsten tunnel-free process

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Tungsten tunnel-free process

Fishing – trapping – and vermin destroying
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Profile ID: LFUS-PAI-P-286120

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