Fishing – trapping – and vermin destroying
Patent
1996-12-16
1997-12-16
Quach, T. N.
Fishing, trapping, and vermin destroying
437195, 437228S, 437231, H01L 21283
Patent
active
056984669
ABSTRACT:
A method of forming a tunnel-free tungsten plug is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer of borophospho-tetraethoxysilane (BP-TEOS) is deposited overlying the semiconductor device structures. Contact openings are etched through the insulating layer to the underlying semiconductor device structures wherein a tunnel opens in the insulating layer between contact openings. The semiconductor substrate is covered with a first barrier metal layer. The semiconductor substrate is coated with a spin-on-glass layer wherein the contact openings and the tunnel are filled with the spin-on-glass. The spin-on-glass is anisotropically etched away whereby the spin-on-glass remains only within the tunnel. The semiconductor substrate is covered with a second barrier metal layer. The contact openings are filled with tungsten which is etched back to form tungsten plugs within the contact openings wherein the filled tunnel provides tunnel-free tungsten plugs in the fabrication of the integrated circuit device.
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Chen Shun-Hsiang
Chung Ming-Chih
Lui Hon-Shung
Ackerman Stephen B.
Pike Rosemary L. S.
Quach T. N.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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