4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Regenerative type switching device
  6. With extended latchup current level

Minami Takeuchi

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Drive circuit for a semiconductor device with high voltage for t

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent

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Insulated-gate thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent

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Insulated-gate thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent

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Insulated-gate thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate

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Insulated-gate thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent

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Profile ID: LFUS-PAI-P-365660

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