Drive circuit for a semiconductor device with high voltage for t

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307570, 3072963, H03K 1772

Patent

active

050897195

ABSTRACT:
A drive circuit for a voltage-controlled type semiconductor device is provided which comprises ON gate drive circuit for supplying an ON control signal to a control electrode of the semiconductor device which performs a current switching, OFF gate drive circuit for supplying an OFF control signal to the control electrode of the semiconductor device, high voltage power source, connected to at least one of the ON gate drive circuit and OFF gate drive circuit, for supplying a control current of a predetermined current increase rate to the control electrode of the semiconductor device through at least one of the ON gate drive circuit and OFF gate drive circuit, low voltage power source, provided in juxtaposition with the high voltage power source, for supplying, to the control electrode, enough control current to hold the semiconductor device in a normal state, and switch for supplying an output of the high voltage power source to the control electrode in an earlier portion of a turn ON or a turn OFF period, and an output of the low voltage power source to the control electrode in a normally ON or a normally OFF state.

REFERENCES:
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patent: 4362955 (1982-12-01), Davenport
patent: 4433257 (1984-02-01), Kinoshita
patent: 4464585 (1984-08-01), Seki
patent: 4551635 (1985-11-01), Kuroki
patent: 4568837 (1986-02-01), Seki
patent: 4642483 (1987-02-01), Tomita
patent: 4647797 (1987-03-01), Sanwo et al.
patent: 4677317 (1987-06-01), Sakuma
patent: 4721869 (1988-01-01), Okado
patent: 4831288 (1989-05-01), Chida et al.
"Gating Effects on Thyristor Anode Current di/dt", IEEE Transactions on Power Electronics, vol. PE-2, No. 2, Apr. 1987.

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