Insulated-gate thyristor

Details Insulated-gate thyristor Insulated-gate thyristor

1994-08-16

1995-11-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257153, 257170, H01L 2974, H01L 29743

Patent

active

054649943

ABSTRACT:
Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

REFERENCES:
patent: 5040042 (1991-08-01), Bauer et al.

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