4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Field effect device
  6. Having insulated electrode

Michael Xuefei Tang

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Current magnitude compensation for memory cells in a data...

Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate

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Magnetic memory with porous non-conductive current...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate

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Non-volatile memory cell with non-ohmic selection layer

Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate

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Non-volatile memory with programmable capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Programmable metallization cells and methods of forming the...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2173599

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