Magnetic memory with porous non-conductive current...

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Reexamination Certificate

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C257SE21001, C257SE29323, C365S151000, C438S003000, C438S048000

Reexamination Certificate

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07826181

ABSTRACT:
A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.

REFERENCES:
patent: 5761115 (1998-06-01), Kozicki
patent: 6985378 (2006-01-01), Kozicki
patent: 7093347 (2006-08-01), Nowak
patent: 7189435 (2007-03-01), Tuominen
patent: 7430135 (2008-09-01), Huai
patent: 7518835 (2009-04-01), Huai
patent: 7576956 (2009-08-01), Huai
patent: 2006/0060832 (2006-03-01), Symanczyk
patent: 2006/0063052 (2006-03-01), Hu et al.
patent: 2006/0245117 (2006-11-01), Nowak
patent: 2007/0171694 (2007-07-01), Huai
patent: 2008/0026253 (2008-01-01), Yuasa et al.
patent: 2008/0061388 (2008-03-01), Diao
patent: 2008/0180991 (2008-07-01), Wang
patent: 2008/0191251 (2008-08-01), Ranjan et al.
patent: 2009/0302403 (2009-12-01), Nguyen
Yan et al., “Magnesium oxide as a candidate high- k gate dielectric”, 2006, Applied Physics Lett., vol. 88, pp. 142901-1-142901-3.
Wendt et al., “Electronic and vibrational properties of ultrathin SiO2 films grown on Mo(112)”, 2005, Phys. Rev., vol. B72, pp. 1150409-1-115409-9.
U.S. Appl. No. 12/106,382, filed Apr. 21, 2008, Inventors: Xi et al.
U.S. Appl. No. 12/170,519, filed Jul. 10, 2008, Inventors: Xi et al.
U.S. Appl. No. 12/269,507, filed Nov. 12, 2008, Inventors: Tian et al.
U.S. Appl. No. 12/269,514, filed Nov. 12, 2008, Inventors: Venkatasamy et al.
W.W. Zhuang et al., Tech Dig. IEDM (2002) 193.
G.I. Baek et al., Tech. Dig. IEDM (2005) 750.
G.I. Baek et al., Tech. Dig. IEDM (2004) 587.
T. Thurn-Albrecht et al., Science, 290, 2126 (2000).
Hideki Masuda and Kenji Fukuda, Science, 268, 1466 91995), (1995).
Masuda et al., Ordered Metal Nanohole Arrays Made by a Two-Step Replication of Honeycomb Structures of Anodic Alumina, Science, OI. 268, Jun. 9, 1995.
Song-Zhu Chu et al., Fabrication of Ideally Ordered Nanoporous Alumina Films and Integrated Alumina Nanotubule Arrays by High-Field Anodization, Adv. Mater. 2005, 17, 2115-2119.
Macak et al., High-Aspect-Ratio TiO2, Nanotubes by Anodization of Titanium, Angew. Chem. Int. Ed. 2005, 44, 2100-2102.
A. Huczko, Template-Based Synthesis of Nanomaterials, Appl. Phys. A 70, 365-376 (2000).

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