4. Fishing, trapping, and vermin destroying

Michael R. Hsing

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High voltage lateral DMOS device with enhanced drift region

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Method of forming Self-aligned lateral DMOS with spacer...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate

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Power devices with super junctions and associated methods...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Self-aligned lateral DMOS with spacer drift region

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Self-alignment technique for forming junction isolation and well

Fishing – trapping – and vermin destroying
Patent

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Profile ID: LFUS-PAI-P-638192

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