Power devices with super junctions and associated methods...

Details Power devices with super junctions and associated methods... Power devices with super junctions and associated methods...

2009-10-08

2011-12-27

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S137000, C438S138000, C438S156000, C438S173000, C257S060000, C257SE21018, C257SE21036, C257SE21410

Reexamination Certificate

active

08084811

ABSTRACT:
Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes forming an epitaxial layer on a substrate material and forming a trench in the epitaxial layer. The trench has a first sidewall, a second sidewall, and a bottom between the first and second sidewalls. The method also includes forming an insulation material on at least one of the first and second sidewalls of the trench and diffusing a dopant into the epitaxial layer via at least one of the first and second sidewalls of the trench via the insulation material.

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