4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With heterojunction

Masato Matsushima

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Compound semiconductor light emitting device and method of prepa

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent

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Compound semiconductor light emitting device and method of prepa

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent

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Epitaxial wafer and method of preparing the same

Stock material or miscellaneous articles – Composite – Of inorganic material
Patent

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Epitaxial wafer and method of preparing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent

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Epitaxial wafer having a gallium nitride epitaxial layer...

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-161461

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